| PART |
Description |
Maker |
| H4006501IC H4006 H4006501CID H4006501COB |
13.56MHz 64 Data bit Read Only Contactless Identification Device
|
EMMICRO[EM Microelectronic - MARIN SA]
|
| FM93CS06V FM93CS06 FM93CS06E |
(MICROWIRE Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| NM93CS46 |
(MICROWIRE⑩ Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| FM93CS66 FM93CS66V FM93CS66E FM93CS66L FM93CS66LZ |
(MICROWIRE?Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE ™ Bus Interface))4096-Bit Serial EEPROM
(MICROWIRE Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface))4096-Bit Serial EEPROM with Data Protect and Sequential Read
Protect (MICROWIRE TM Bus Interface))4096-Bit Serial EEPROM with Data Protect and Sequential Read
|
FAIRCHILD[Fairchild Semiconductor]
|
| 25M02GVTBIG 25M02GVTBIT 25M02GVTCIG 25M02GVTCIT 25 |
3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS
|
Winbond
|
| SR176-W4/1GE SR176-SBN18/1GE SR176-A3S/1GE SR176-A |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID
|
ST Microelectronics
|
| SSI32P3040-CM SSI32P3040-CGT |
Disk Read Data Processor 磁盘读取数据处理
|
Electronic Theatre Controls, Inc.
|
| SSI32P4910A-IH |
Disk Read Data Processor 磁盘读取数据处理
|
Advanced Analogic Technologies, Inc.
|
| TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY
32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
| S29JL032J60BFI220 S29JL032J70BFI220 S29JL032J60TFI |
32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-Only, Simultaneous Read/Write Flash Memory
|
SPANSION
|
